SUD45P04-16P Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET

SUD45P04-16P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.3
2.0
10
T_J = 150 °C
1.7
1
T_J = 25 °C
1.4
I_D = 250 μA
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
4300
3440
C_iss
2580
1720
860
C_oss
C_rss
0
0
10
20
30
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.2
I_D = 14 A
1.9
V_GS = 10 V
1.6
1.3
V_GS = 4.5 V
1.0
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1.1
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
51
I_D = 250 μA
49
47
45
43
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
40
30
20
10
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating
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Document Number: 63372
4
S11-1657-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000