SUD45P04-16P Datasheet, PDF (3/8 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SUD45P04-16P
Vishay Siliconix
40
0.030
V_GS = 10 V thru 4 V
0.025
30
0.020
V_GS = 4.5 V
20
0.015
V_GS = 10 V
10
V_GS = 3 V
0.010
0
0
0.5
1
1.5
2
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.005
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1.0
0.040
I_D = 14 A
0.8
0.034
0.6
T_C = 25 °C
0.4
0.028
0.022
T_J = 125 °C
0.2
0
0
50
40
30
20
10
T_C = 125 °C
T_C = - 55 °C
0.7
1.4
2.1
2.8
3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
T_C = - 55 °C _{TC = 25 °C}
T_C = 125 °C
0.016
T_J = 25 °C
0.010
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
I_D = 14 A
8
V_DS = 20 V
6
V_DS = 10 V
4
V_DS = 32 V
2
0
0
6
12
18
24
30
I_D - Drain Current (A)
Transconductance
0
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 63372
www.vishay.com
S11-1657-Rev. A, 15-Aug-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000