SUD45P04-16P Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 40 V (D-S) MOSFET

P-Channel 40 V (D-S) MOSFET
SUD45P04-16P
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () Max.
0.0162 at V_GS = - 10 V
- 40
0.0230 at V_GS = - 4.5 V
I_D (A)
- 36
- 24
Q_g (Typ.)
67
TO-252
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD45P04-16P-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters
S
G
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 40
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 300 µs)
T_C = 25 °C
T_C = 70 °C
I_D
- 36
- 29
A
I_DM
- 100
Avalanche Current
I_AS
- 32
Single Avalanche Energy^a
L = 0.1 mH
E_AS
51
mJ
Maximum Power Dissipation^a
T_C = 25 °C
41.7^b
T_A = 25 °C^c
P_D
2.1
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Symbol
R_thJA
R_thJC
Limit
60
3
Unit
°C/W
Document Number: 63372
www.vishay.com
S11-1657-Rev. A, 15-Aug-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000