SUD40N03-18P Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175℃ MOSFET

SUD40N03-18P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
100
V_GS = 10 V
I_D = 40 A
1.6
1.2
10
0.8
Source-Drain Diode Forward Voltage
T_J = 175_C
T_J = 25_C
0.4
0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current vs.
Case Temperature
50
40
30
20
10
1
0
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Safe Operating Area
500
100
Limited
by r_DS(on)
10, 100 ms
10
1
T_C = 25_C
Single Pulse
1 ms
10 ms
100 ms
1s
dc
0
0
25 50 75 100 125 150 175
T_C – Case Temperature (_C)
0.1
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10^–4
10^–3
www.vishay.com S FaxBack 408-970-5600
2-4
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
10
30
Document Number: 71086
S-63636—Rev. A, 08-Nov-99