SUD40N03-18P Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175℃ MOSFET

New Product
SUD40N03-18P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.018 @ V_GS = 10 V
30
0.027 @ V_GS = 4.5 V
I_D (A)^a
"40
"34
D
TO-252
GDS
Top View
Order Number:
SUD40N03-18P
Drain Connected to Tab
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
"40
"28
"100
40
62.5^c
7.5^b
–55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^b
Junction-to-Case
Junction-to-Lead
Notes
a. Package Limited.
b. Surface Mounted on 1” x1” FR4 Board, t v 10 sec.
c. See SOA curve for voltage derating.
Document Number: 71086
S-63636—Rev. A, 08-Nov-99
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
R_thJL
Typical
17
50
2
4
Maximum
20
60
2.4
4.8
Unit
_C/W
_C/W
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