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| SUD40N03-18P Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175℃ MOSFET | |||
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SUD40N03-18P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, F = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 40 A
VDD = 15 V, RL = 0.37 W
ID ^ 40 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Continuous Current
IS
Pulsed Current
ISM
Diode Forward Voltageb
VSD
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
IF = 100 A, VGS = 0 V
IF = 40 A, di/dt = 100 A/ms
Min Typa Max Unit
30
V
1.0
"100
nA
1
mA
50
40
A
0.014
0.018
0.029
W
0.021
0.027
10
S
1300
340
pF
95
19
30
5
nC
3
8
12
8.5
13
ns
17
25
6
9
40
A
80
1.5
V
30
50
ns
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 71086
S-63636âRev. A, 08-Nov-99
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