SUD30N04-10 Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175C MOSFET

SUD30N04-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 30 A
2.0
1.5
10
1.0
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.5
0.0
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
40
30
20
10
1
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Safe Operating Area
200
100
Limited
by r_DS(on)
10
1
T_C = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
dc
0
0
25 50 75 100 125 150 175
T_A - Ambient Temperature (_C)
0.1
0.1
1
10
50
V_DS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 5}
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4
Single Pulse
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
Square Wave Pulse Duration (sec)
10 ^{- 1}
1
3
Document Number: 70782
S-31724—Rev. D, 18-Aug-03