SUD30N04-10 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175C MOSFET

SUD30N04-10
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
Drain-Source On-State Resistance^a
Forward Transconductance^a
Dynamic^b
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 mA
V_DS = V_GS, I_DS = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 40 V, V_GS = 0 V
V_DS = 40 V, V_GS = 0 V, T_J = 125_C
V_DS = 40 V, V_GS = 0 V, T_J = 175_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 30 A
V_GS = 10 V, I_D = 30 A, T_J = 125_C
V_GS = 10 V, I_D = 30 A, T_J = 175_C
V_GS = 4.5 V, I_D = 10 A
V_GS = 4.5 V, I_D = 10 A, T_J = 125_C
V_GS = 4.5 V, I_D = 10 A, T_J = 175_C
V_DS = 15 V, I_D = 30 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Gate Resistance
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 30 A
V_DD = 15 V, R_L = 0.5 W
I_D ] 30 A, V_GEN = 10 V, R_G = 2.5 W
Source-Drain Ciode Ratings and Characteristics (T_C = 25_C)^b
Continuous Current
Pulsed Current
Forward Voltage^a
Reverse Recovery Time
I_s
I_SM
V_SD
I_F = 30 A, V_GS = 0 V
t_rr
I_F = 30 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
40
V
1
3
"100
nA
1
50
mA
150
30
A
0.085 0.010
0.014 0.017
0.0185 0.022
W
0.0115 0.014
0.0195 0.024
0.025 0.031
20
57
S
2700
600
pF
160
50
100
9
nC
11
1
3.6
W
14
30
13
30
ns
45
90
25
50
30
A
120
0.90
1.50
V
50
100
ns
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Document Number: 70782
S-31724—Rev. D, 18-Aug-03