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SUD30N04-10 Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 40-V (D-S), 175C MOSFET
SUD30N04-10
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.010 @ VGS = 10 V
0.014 @ VGS = 4.5 V
ID (A)
30a
30a
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
TO-252
GDS
Top View
Order Number:
SUD30N04-10
Drain Connected to Tab
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 100_C
L = 0.1 mH
TC = 25_C
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
40
"20
30a
30a
120
50
125
97c
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. Surface mounted on 1” FR4 board.
Document Number: 70782
S-31724—Rev. D, 18-Aug-03
PCB Mountd
Free Air
Symbol
RthJA
RthJC
Typical
45
110
1.5
Maximum
55
125
1.8
Unit
_C/W
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