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SUD25N04-25 Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175C MOSFET | |||
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SUD25N04-25
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.4
100
VGS = 10 V
2.0
ID = 25 A
1.6
Source-Drain Diode Forward Voltage
TJ = 175_C
1.2
10
0.8
TJ = 25_C
0.4
0.0
â50 â25 0
25 50 75 100 125 150 175
TJ â Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
30
24
18
12
6
1
0
0.3
0.6
0.9
1.2
VSD â Source-to-Drain Voltage (V)
Safe Operating Area
100
Limited by rDS(on)
10
1
TC = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
1 s, dc
0
0
25 50 75 100 125 150 175
TC â Case Temperature (_C)
0.1
0.1
1
10
100
VDS â Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10â4
www.vishay.com
2-4
10â3
10â2
10â1
1
Square Wave Pulse Duration (sec)
10
30
Document Number: 71129
S-04558âRev. B, 27-Aug-01
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