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| SUD25N04-25 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175C MOSFET | |||
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SUD25N04-25
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 125_C
VDS = 40 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 25 A
VGS = 10 V, ID = 25 A, TJ = 125_C
VGS = 10 V, ID = 25 A, TJ = 175_C
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 25 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, F = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 25 A
VDD = 20 V, RL = 0.8 W
ID ^ 25 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
Source-Drain Reverse Recovery Time
trr
IF = 25 A, VGS = 0 V
IF = 25 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typa Max Unit
40
V
1.0
2.0
3.0
"100
nA
1
50
mA
150
50
A
0.02
0.025
0.040
W
0.053
0.031
0.040
15
S
510
125
pF
65
13
20
2.5
nC
3
5
10
47
70
ns
15
30
5
10
50
A
1.1
1.3
V
17
30
ns
www.vishay.com
2-2
Document Number: 71129
S-04558âRev. B, 27-Aug-01
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