SUD25N04-25 Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 175C MOSFET

SUD25N04-25
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.025 @ V_GS = 10 V
40
0.040 @ V_GS = 4.5 V
I_D (A)
25
20
D
TO-252
GDS
Top View
Order Number:
SUD25N04-25
Drain Connected to Tab
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^b
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AR
E_AR
P_D
T_J, T_stg
40
"20
25
15
50
50
25
31
33^b
3^b
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^b
Junction-to-Case
t v 10 sec
Steady State
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71129
S-04558—Rev. B, 27-Aug-01
Symbol
R_thJA
R_thJC
Typical
20
40
3.7
Maximum
25
50
4.5
Unit
_C/W
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