SUD17N25-165_08 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175 °C MOSFET

SUD17N25-165
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
2.8
100
V_GS = 10 V
2.4
I_D = 17 A
2.0
T_J = 150 °C
1.6
10
1.2
T_J = 25 °C
0.8
0.4
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
20
10
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100
16
Limited by r_DS(on)
10 µs
10
12
100 µs
8
4
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Maximum Avalanche Drain Current
vs. Case Temperature
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.02
0.05
Single Pulse
1
0.1 _0.1
T_C = 25 °C
Single Pulse
1 ms
10 ms
100 ms, dc
1
10
100
V_DS - Drain-to-Source Voltage (V)
Safe Operating Area
1000
0.01
10- ⁴
10- ³
10- ²
10- ¹
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72851.
www.vishay.com
4
Document Number: 72851
S-71660-Rev. B, 06-Aug-07