SUD17N25-165_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175 °C MOSFET

New Product
SUD17N25-165
Vishay Siliconix
N-Channel 250-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
250
0.165 at V_GS = 10 V
I_D (A)
17
FEATURES
• TrenchFET^® Power MOSFET
• 175 °C Junction Temperature
RoHS
COMPLIANT
D
TO-252
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD17N25-165-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
250
V
V_GS
± 20
Continuous Drain Current (T_J = 175 °C)^b
T_C = 25 °C
T_C = 125 °C
I_D
17
9.8
Pulsed Drain Current
I_DM
20
A
Continuous Source Current (Diode Conduction)
I_S
17
Single Pulse Avalanche Current
I_AS
5
Single Pulse Avalanche Energy
L = 0.1 mH
E_AS
1.25
mJ
Maximum Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
136^b
3^a
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. See SOA curve for voltage derating.
t ≤ 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
°C/W
Document Number: 72851
S-71660-Rev. B, 06-Aug-07
www.vishay.com
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