SUD17N25-165_08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 250-V (D-S) 175 °C MOSFET

SUD17N25-165
Vishay Siliconix
New Product
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ^a
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
V_(BR)DSS
V_GS = 0 V, I_D = 250 µA
250
V_GS(th)
V_DS = V_GS, I_D = 250 µA
2.5
I_GSS
V_DS = 0 V, V_GS = ± 20 V
V_DS = 250 V, V_GS = 0 V
I_DSS
V_DS = 250 V, V_GS = 0 V, T_J = 125 °C
V_DS = 250 V, V_GS = 0 V, T_J = 175 °C
I_D(on)
V_DS = 15 V, V_GS = 10 V
17
V
4.0
± 100
nA
1
50
µA
250
A
Drain-Source On-State Resistance^b
Forward Transconductance^b
r_DS(on)
g_fs
V_GS = 10 V, I_D = 14 A
V_GS = 10 V, I_D = 14 A, T_J = 125 °C
V_GS = 10 V, I_D = 14 A, T_J = 175 °C
V_DS = 15 V, I_D = 17 A
0.131
0.165
0.347
Ω
0.462
36
S
Dynamic^a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
C_iss
C_oss
C_rss
Q_g
Q_gs
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
V_DS = 125 V, V_GS = 10 V, I_D = 17 A
1950
160
pF
70
30
42
10
nC
Gate-Drain Charge^c
Gate Resistance
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Q_gd
R_g
t_d(on)
t_r
t_d(off)
V_DD = 125 V, R_L = 7.35 Ω
I_D ≅ 17 A, V_GEN = 10 V, R_g = 2.5 Ω
10
1.6
Ω
15
25
130
195
ns
30
45
Fall Time^c
t_f
Source-Drain Diode Ratings and Characteristics (T_C = 25 °C)
Pulsed Current
I_SM
Diode Forward Voltage^b
V_SD
I_F = 17 A, V_GS = 0 V
100
150
20
A
0.9
1.5
V
Source-Drain Reverse Recovery Time
t_rr
I_F = 17 A, di/dt = 100 A/µs
115
175
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72851
S-71660-Rev. B, 06-Aug-07