SUD06N10-225L-GE3 Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUD06N10-225L-GE3
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
2.0
10
1.75
V_GS = 10 V
I_D = 3 A
1.5
1.25
T_J = 175 °C
1.0
0.75
T_J = 25 °C
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
8
1
0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10
6
4
2
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Maximum Avalanche Drain Current vs. Case Temperature
2
1 _{Duty Cycle = 0.5}
0.2
Limited by R_DS(on)*
1
100 μs
1 ms
10 ms
DC, 10 s,
TSS_{CCCiinn==ggll22ee55PP}°°_uuCCllssee
0.1
BVDSS Limited
1 s, 100 ms
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.1
0.1
0.02
0.05
Single Pulse
0.01
10^{- 5}
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62831.
www.vishay.com
For technical questions, contact: [e-mail]
Document Number: 62831
4
S13-0193-Rev. A, 28-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000