SUD06N10-225L-GE3 Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
15
15
V_GS = 10 V thru 5 V
12
12
SUD06N10-225L-GE3
Vishay Siliconix
T_C = - 55 °C
25 °C
9
4V
6
9
125 °C
6
3
0
0
15
12
9
6
3
0
0
350
300
250
200
150
100
50
0
0
3 V, 2 V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = - 55 °C
25 °C
125 °C
3
6
9
12
15
I_D - Drain Current (A)
Transconductance
C_iss
C_oss
C_rss
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
3
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.30
0.25
0.20
V_GS = 4.5 V
0.15
V_GS = 10 V
0.10
0.05
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
8
V_DS = 50 V
I_D = 6.5 A
6
4
2
0
0
1
2
3
4
5
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 62831
S13-0193-Rev. A, 28-Jan-13
For technical questions, contact: [e-mail]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000