SUD06N10-225L-GE3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

SUD06N10-225L-GE3
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
100
R_DS(on) ()
0.200 at V_GS = 10 V
0.225 at V_GS = 4.5 V
I_D (A)
6.5
6
TO-252
Q_g (Typ)
2.7
FEATURES
• TrenchFET^® Power MOSFETs
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
D
G
D
S
Top View
Drain Connected to Tab
Order Number:
SUD06N10-225L-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
100
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^b
T_C = 25 °C
T_C = 125 °C
I_D
6.5
2.9
Pulsed Drain Current
I_DM
8
A
Continuous Source Current (Diode Conduction)
I_S
6.5
Avalanche Current
I_AR
5
Repetitive Avalanche Energy (Duty Cycle  1 %)
L = 0.1 mH
E_AR
1.25
mJ
Maximum Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
16.7^b
1.25^a
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t  10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
40
80
6
Maximum
50
100
7.5
Unit
°C/W
Document Number: 62831
For technical questions, contact: [e-mail]
www.vishay.com
S13-0193-Rev. A, 28-Jan-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000