SUB45N05-20L Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 50-V (D-S), 175
C MOSFET, Logic Level

SUP/SUB45N05-20L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.25
2.00
1.75
V_GS = 10 V
I_D = 20 A
1.50
1.25
1.00
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
0.75
0.50
0.25
0.00
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs. Case Temperature
60
Safe Operating Area
300
100
10 ms
Limited
45
by r_DS(on)
100 ms
10
30
1 ms
10 ms
15
1
T_C = 25_C
100 ms
dc
Single Pulse
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (_C)
0.1
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.05
0.02
0.01
10^{- 5}
www.vishay.com
2-4
Single Pulse
10^{- 4}
10^{- 3}
10^{- 2}
Square Wave Pulse Duration (sec)
10^{- 1}
1
3
Document Number: 70948
S-21855—Rev. B, 14-Oct-02