SUB45N05-20L Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 50-V (D-S), 175
C MOSFET, Logic Level

SUP/SUB45N05-20L
Vishay Siliconix
N-Channel 50-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V_(BR)DSS (V)
50
r_DS(on) (W)
0.018 @ V_GS = 10 V
0.020 @ V_GS = 4.5 V
TO-220AB
DRAIN connected to TAB
GD S
Top View
SUP45N05-20L
I_D (A)
"45 ^a
TO-263
G DS
Top View
SUB45N05-20L
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
50
V_GS
"20
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
T_C = 25_C
T_C = 125_C
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Repetitive Avalanche Energy^b
L = 0.1 mH
Maximum Power Dissipation
T_C = 25_C (TO-220AB and TO-263)
T_A = 25_C (TO-263)^c
Operating Junction and Storage Temperature Range
I_D
I_DM
I_S
I_AR
E_AR
P_D
T_J, T_stg
"45^a
"32
"100
"45
"45
100
93^c
3.75
-55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263)^d
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70948
S-21855—Rev. B, 14-Oct-02
Symbol
R_thJA
R_thJC
Limit
40
8.0
1.6
Unit
_C/W
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