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| SUB45N05-20L Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 50-V (D-S), 175C MOSFET, Logic Level | |||
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SUP/SUB45N05-20L
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 50 V, VGS = 0 V
VDS = 50 V, VGS = 0 V, TJ = 125_C
VDS = 50 V, VGS = 0 V, TJ = 175_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 4.5 V, ID = 45 A
VDS = 15 V, ID = 45 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 25 V, VGS = 10 V, ID = 45 A
VDD = 25 V, RL = 0.6 W
ID ^ 45 A, VGEN = 10 V, RG = 2.5 W
Source-drain Diode Ratings and Characteristics (Tc = 25_C)b
Pulsed Current
ISM
Forward Voltagea
VSD
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
IF = 45 A, VGS = 0 V
IF = 45 A, di/dt = 100 A/ms
Min Typ Max Unit
50
V
1
2
"100
nA
1
50
mA
150
45
A
0.018
0.030
W
0.020
20
S
1800
3600
370
pF
130
43
60
7
nC
10
10
20
10
20
ns
32
60
7
15
43
A
1.5
V
49
100
ns
www.vishay.com
2-2
Document Number: 70948
S-21855âRev. B, 14-Oct-02
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