SUA70060E Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SUA70060E
Vishay Siliconix
2.0
I_D = 30 A
1.7
1.4
1.1
0.8
Axis Title
10000
V_GS = 10 V
1000
V_GS = 7.5 V
100
100
10
1
0.1
0.01
Axis Title
10000
T_J = 150 °C
T_J = 25 °C
1000
100
0.5
-50
10
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
0.001
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source Drain Diode Forward Voltage
0.05
Axis Title
10000
0.04
0.03
1000
0.02
0.01
0
2
T_J = 125 °C
100
T_J = 25 °C
4
6
8
V_GS - Gate-to-Source Voltage (V)
2nd line
10
10
On-Resistance vs. Gate-to-Source Voltage
Axis Title
1.0
10000
0.4
1000
-0.2
I_D = 5 mA
-0.8
100
I_D = 250 μA
-1.4
-2.0
-50 -25
10
0 25 50 75 100 125 150
T_J - Temperature (°C)
2nd line
Threshold Voltage
125
I_D = 250 μA
120
Axis Title
115
110
10000
1000
100
105
-50 -25
10
0 25 50 75 100 125 150
T_J - Temperature (°C)
2nd line
Drain Source Voltage vs. Junction Temperature
1000
100
I_DM limited
I_D limited
Axis Title
10000
1000
10
Limited by R_DS(on) ⁽¹⁾
10 μs
100 us
1 ms 100
1
10 ms
T_C = 25 °C
Single pulse
0.1
0.01 0.1
1
100ms,1 s, DC
BVDSS limited
10
100
10
1000
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area
S16-1128-Rev. A, 06-Jun-16
4
Document Number: 65787
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000