SUA70060E Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

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SUA70060E
Vishay Siliconix
N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () MAX.
0.00610 at V_GS = 10 V
100
0.00700 at V_GS = 7.5 V
I_D (A)
56.6
54.4
Q_g (TYP.)
53.5 nC
Thin-Lead TO-220 FULLPAK
Ordering Information:
SUA70060E-E3 (lead (Pb)-free)
G ^DS
FEATURES
• ThunderFET^® power MOSFET
• Q_gd / Q_gs ratio < 1 optimizes switching
characteristics
• 100 % R_g and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
D
• Power supply
- Secondary synchronous rectification
- AC/DC switch-mode power supplies
• DC/DC converter
G
• Power tools
• Motor drive switch
• DC/AC inverter
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
I_D
T_C = 70 °C
Pulsed Drain Current (t = 100 μs)
I_DM
Avalanche Current
Single Avalanche Energy ^a
I_AS
L = 0.1 mH
E_AS
Maximum Power Dissipation ^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
P_D
T_J, T_stg
LIMIT
100
± 20
56.6
45.2
240
50
125
39
25
-55 to +150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) ^b
Junction-to-Case (Drain)
Notes
a. Duty cycle  1 %.
b. When mounted on 1" square PCB (FR4 material).
SYMBOL
R_thJA
R_thJC
LIMIT
60
3.2
UNIT
°C/W
S16-1128-Rev. A, 06-Jun-16
1
Document Number: 65787
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000