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SUA70060E Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SUA70060E
Vishay Siliconix
Axis Title
250
10000
VGS = 10 V thru 7 V
200
VGS = 6 V
1000
150
Axis Title
200
10000
160
1000
120
100
50
0
0
100
VGS = 5 V
VGS = 4 V
10
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
80
40
0
0
TC = 25 °C
100
TC = 125 °C
TC = -55 °C
2
4
6
8
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10
10
0.007
0.006
0.005
0.004
Axis Title
VGS = 7.5 V
VGS = 10 V
10000
1000
100
0.003
0
20
40
60
80
ID - Drain Current (A)
2nd line
10
100
On-Resistance vs. Drain Current
6000
Axis Title
10000
4800
Ciss
3600
1000
2400
Coss
100
1200
Crss
0
10
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
ID = 30 A
8
6
Axis Title
10000
1000
4
VDS = 25 V, 50 V, and 75 V
100
2
0
10
0
11
22
33
44
55
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
Axis Title
100
TC = -55 °C
80
TC = 25 °C
60
10000
1000
40
TC = 125 °C
100
20
0
10
0 5.0 10.0 15.0 20.0 25.0 30.0
ID - Drain Current (A)
2nd line
Transconductance
S16-1128-Rev. A, 06-Jun-16
3
Document Number: 65787
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000