SIAA40DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiAA40DJ
Vishay Siliconix
Axis Title
100
10000
T_J = 150 °C
10
1000
T_J = 25 °C
1
100
0.1
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
Axis Title
2.2
10000
2.0
1.8
1000
1.6
1.4
100
I_D = 250 μA
1.2
1.0
-50 -25
10
0 25 50 75 100 125 150
T_J - Temperature (°C)
2nd line
Threshold Voltage
0.04
0.03
Axis Title
I_D = 5 A
10000
1000
0.02
0.01
T_J = 125 °C
100
T_J = 25 °C
0
10
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
30
10000
25
20
1000
15
10
100
5
0
0.001 0.01
0.1
1
10
Time (s)
2nd line
10
100 1000
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on) ⁽¹⁾
10
Axis Title
I_DM limited
10000
100 μs ₁₀₀₀
1 ID limited
1 ms
10 ms
0.1
T_A = 25 °C
Single pulse
0.01
0.1
1
BVDSS limited
10
100 ms100
1s
10 s
DC
10
100
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area, Junction-to-Ambient
S16-1460-Rev. B, 25-Jul-16
4
Document Number: 75671
For technical questions, contact: [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000