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SIAA40DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiAA40DJ
Vishay Siliconix
Axis Title
60
VGS = 10 V thru 5 V
50
VGS = 4 V
40
30
20
VGS = 3 V
10
0
0
0.5
1
1.5
2
2.5
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
10000
1000
100
10
3
Axis Title
60
10000
50
40
1000
30
TC = 25 °C
20
10
0
0
100
TC = 125 °C
TC = -55 °C
10
0.5 1 1.5 2 2.5 3 3.5 4
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
0.020
Axis Title
10000
0.015
0.010
0.005
VGS = 4.5 V
VGS = 10 V
1000
100
0
10
0
10 20 30 40 50 60
ID - Drain Current (A)
2nd line
On-Resistance vs. Drain Current
1500
1200
900
Axis Title
Ciss
10000
1000
600
300
0
0
Coss
100
Crss
5
10
15
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
20
10
ID = 10 A
Axis Title
8
VDS = 20 V
6
4
VDS = 10 V
VDS = 32 V
2
0
0
4
8
12
16
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
10000
1000
100
10
20
1.8
ID = 5 A
1.6
Axis Title
VGS = 10 V
10000
1.4
1000
VGS = 4.5 V
1.2
1.0
100
0.8
0.6
-50
10
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S16-1460-Rev. B, 25-Jul-16
3
Document Number: 75671
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000