SIA906EDJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

SiA906EDJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
1.7
I_D = 5.1 A
1.5
8
V_DS = 10 V
1.3
6
V_DS = 16 V
1.1
4
0.9
2
0.7
I_D = 3.9 A
V_GS = 4.5 V, 2.5 V
0
0
2
4
6
8
Q_g - Total Gate Charge (nC)
Gate Charge
100
10
T_J = 150 °C
T_J = 25 °C
1
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.3
1.2
1.1
I_D = 250 µA
1.0
0.9
0.8
0.7
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.20
I_D = 2 A
0.16
0.12
0.08
T_J = 125 °C
0.04
T_J = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
15
10
5
0
0.001 0.01
0.1
1
10
100 1000
Pulse (s)
Single Pulse Power (Junction-to-Ambient)
www.vishay.com
4
Document Number: 69067
S-83087-Rev. A, 29-Dec-08