SIA906EDJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET

New Product
SiA906EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
10-2
10^-3
3
10-4
10-5
2
10-6
IGSS at 25 °C
10-7
1
10-8
10-9
0
0
3
6
9
12
15
18
10-10
0
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
T_J = 150 °C
T_J = 25 °C
3
6
9
12
15
18
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
15
5
V_GS = 5 thru 3 V
V_GS = 2.5 V
12
4
9
3
T_C = - 55 °C
6
3
0
0.0
0.12
V_GS = 2 V
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
1
0
0.0
500
T_C = 25 °C
T_C = 125 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.09
0.06
0.03
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
400
C_iss
300
200
C_oss
100
C_rss
0
0 2 4 6 8 10 12 14 16 18 20
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 69067
S-83087-Rev. A, 29-Dec-08
www.vishay.com
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