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SIA537EDJ Datasheet, PDF (4/14 Pages) Vishay Telefunken – N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
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SiA537EDJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
4
10-2
10-3
TJ = 25 °C
3
10-4
10-5
2
10-6
TJ = 150 °C
10-7
1
10-8
TJ = 25 °C
10-9
0
0
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10-10
0
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
20
10
VGS = 5 V thru 2 V
16
8
12
VGS = 1.5 V
6
8
4
VGS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
4
2
0
0.0
800
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.06
0.04
0.02
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
600
400
200 Crss
Ciss
Coss
0.00
0
5
10
15
20
ID - Drain Current (A)
0
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
S13-2635-Rev. A, 30-Dec-13
4
Document Number: 62934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000