SIA537EDJ Datasheet, PDF (2/14 Pages) Vishay Telefunken – N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET

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SiA537EDJ
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL
TYP. MAX.
P-CHANNEL
TYP. MAX.
UNIT
Maximum Junction-to-Ambient ^b,f
Maximum Junction-to-Case (Drain)
t5s
Steady State
R_thJA
R_thJC
52
65
52
65
12.5
16
12.5
16
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate Threshold Voltage
V_DS
V_DS/T_J
V_GS(th)/T_J
V_GS(th)
V_GS = 0 V, I_D = 250 μA
V_GS = 0 V, I_D = -250 μA
I_D = 250 μA
I_D = -250 μA
I_D = 250 μA
I_D = -250 μA
V_DS = V_GS, I_D = 250 μA
V_DS = V_GS, I_D = -250 μA
Gate-Source Leakage
V_DS = 0 V, V_GS = ± 4.5 V
I_GSS
V_DS = 0 V, V_GS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Current ^b
Drain-Source On-State Resistance ^b
Forward Transconductance ^b
I_DSS
I_D(on)
R_DS(on)
g_fs
V_DS = 12 V, V_GS = 0 V
V_DS = -20 V, V_GS = 0 V
V_DS = 12 V, V_GS = 0 V, T_J = 55 °C
V_DS = -20 V, V_GS = 0 V, T_J = 55 °C
V_DS  5 V, V_GS = 4.5 V
V_DS  -5 V, V_GS = -4.5 V
V_GS = 4.5 V, I_D = 5.2 A
V_GS = -4.5 V, I_D = -3.8 A
V_GS = 2.5 V, I_D = 4.8 A
V_GS = -2.5 V, I_D = -3.3 A
V_GS = 1.8 V, I_D = 2.5 A
V_GS = -1.8 V, I_D = -1 A
V_GS = -1.5 V, I_D = -0.5 A
V_DS = 6 V, I_D = 5.2 A
V_DS = -6 V, I_D = -3.6 A
MIN. TYP. MAX. UNIT
N-Ch 12
-
-
V
P-Ch -20
-
-
N-Ch -
8
-
P-Ch -
-15
-
mV/°C
N-Ch -
-2.5
-
P-Ch -
2.5
-
N-Ch 0.4
-
1
V
P-Ch -0.4
-
-1
N-Ch -
- ± 0.5
P-Ch
-
-
±3
N-Ch -
-
±5
P-Ch -
N-Ch -
-
± 30
μA
-
1
P-Ch -
-
-1
N-Ch -
-
10
P-Ch -
-
-10
N-Ch 10
-
-
A
P-Ch -10
-
-
N-Ch - 0.023 0.028
P-Ch - 0.044 0.054
N-Ch - 0.027 0.033
P-Ch - 0.057 0.070 
N-Ch - 0.035 0.042
P-Ch - 0.075 0.104
P-Ch - 0.097 0.165
N-Ch -
23
-
S
P-Ch -
11
-
S13-2635-Rev. A, 30-Dec-13
2
Document Number: 62934
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000