SIA537EDJ Datasheet, PDF (3/14 Pages) Vishay Telefunken – N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET

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SiA537EDJ
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Dynamic ^a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Ch -
455
-
C_iss
N-Channel
P-Ch -
770
-
V_DS = 6 V, V_GS = 0 V, f = 1 MHz
N-Ch -
190
-
C_oss
P-Channel
pF
P-Ch -
90
-
V_DS = -10 V, V_GS = 0 V, f = 1 MHz
N-Ch
-
150
-
C_rss
P-Ch -
81
-
V_DS = 6 V, V_GS = 8 V, I_D = 6.8 A
N-Ch -
10.5 16
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
V_DS = -10 V, V_GS = -8 V, I_D = -4.9 A P-Ch
-
N-Ch -
16.3 25
6.2 9.5
Q_gs
N-Channel
P-Ch -
V_DS = 6 V, V_GS = 4.5 V, I_D = 6.8 A
N-Ch
-
P-Channel
P-Ch -
9.5 14.5 _nC
0.8
-
1.4
-
Q_gd
V_DS = -10 V, V_GS = -4.5 V, I_D = -4.9 A N-Ch
-
1.6
-
P-Ch -
2.3
-
Gate Resistance
R_g
f = 1 MHz
N-Ch 0.8
4
8

P-Ch 1
5.1
10
Turn-On Delay Time
Rise Time
t_d(on)
t_r
N-Ch -
N-Channel
P-Ch -
V_DD = 6 V, R_L = 1.1 
N-Ch -
I_D  5.4 A, V_GEN = 4.5 V, R_g = 1 
P-Ch
-
10
15
15
25
12
20
15
25
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
t_d(off)
t_f
t_d(on)
t_r
P-Channel
N-Ch -
V_DD = -10 V, R_L = 2.6 
P-Ch -
I_D  -3.9 A, V_GEN = -4.5 V, R_g = 1  _N-Ch
-
P-Ch -
N-Ch -
N-Channel
V_DD = 6 V, R_L = 1.3 
I_D  5.4 A, V_GEN = 8 V, R_g = 1 
P-Ch -
N-Ch -
P-Ch -
25
40
30
45
12
20
10
15
ns
5
10
7
16
10
15
12
20
Turn-Off Delay Time
Fall Time
t_d(off)
t_f
P-Channel
N-Ch -
V_DD = -10 V, R_L = 2.6 
P-Ch -
I_D  -3.9 A, V_GEN = -8 V, R_g = 1 
N-Ch
-
P-Ch -
20
30
25
40
10
15
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current ^a
I_SM
T_C = 25 °C
N-Ch -
P-Ch -
N-Ch -
P-Ch -
-
4.5
-
-4.5
A
-
20
-
-15
Body Diode Voltage
V_SD
I_S = 4.8 A, V_GS = 0 V
I_S = -3.9 A, V_GS = 0 V
N-Ch -
0.8 1.2
V
P-Ch -
-0.9 -1.2
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_rr
N-Ch -
P-Ch -
25
50
ns
13
25
Q_rr
N-Channel
N-Ch -
I_F = 5.4 A, dI/dt = 100 A/μs, T_J = 25 °C _P-Ch
-
10
20
nC
5.5
12
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t_a
P-Channel
N-Ch -
13
-
I_F = -3.9 A, dI/dt = -100 A/μs, T_J = 25 °C P-Ch
-
7.5
-
ns
t_b
N-Ch -
12
-
P-Ch -
5.5
-
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2635-Rev. A, 30-Dec-13
3
Document Number: 62934
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