SIA469DJ Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiA469DJ
Vishay Siliconix
Axis Title
100
10000
T_J = 150 °C
10
1000
T_J = 25 °C
1
100
0.1
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source-Drain Diode Forward Voltage
0.06
0.05
Axis Title
I_D = 5 A
10000
0.04
0.03
T_J = 150 °C
1000
0.02
0.01
T_J = 25 °C
100
0
10
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Axis Title
1.8
10000
1.7
1.6
1000
1.5
1.4
1.3
I_D = 250 μA
100
1.2
1.1
1.0
-50 -25
10
0 25 50 75 100 125 150
T_J - Temperature (°C)
2nd line
Threshold Voltage
Axis Title
30
10000
25
20
1000
15
10
100
5
0
0.001 0.01
0.1
1
10
Time (s)
2nd line
10
100 1000
Single Pulse Power, Junction-to-Ambient
100
I_D limited
10
Axis Title
I_DM limited
10000
100 μs ¹⁰⁰⁰
1
Limited by R_DS(on) ⁽¹⁾
0.1
T_A = 25 °C
Single pulse
0.01
0.1
1
1 ms
10 ms
100 ms ¹⁰⁰
1s
10 s
DC
BVDSS limited
10
10
100
V_DS - Drain-to-Source Voltage (V)
(1) _{VGS > minimum VGS at which RDS(on) is specified}
Safe Operating Area, Junction-to-Ambient
S16-2441Rev. A, 05-Dec-16
4
Document Number: 75354
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