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SIA469DJ Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiA469DJ
Vishay Siliconix
40
35
30
25
20
15
10
5
0
0
Axis Title
VGS = 10 V thru 5 V
10000
VGS = 4 V
1000
100
VGS = 3 V
0.5 1 1.5 2 2.5
VDS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
10
3
Axis Title
40
10000
30
20
10
0
0
TC = 25 °C
TC = 125 °C
TC = -55 °C
1
2
3
4
VGS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
1000
100
10
5
0.05
Axis Title
10000
0.04
0.03
VGS = 4.5 V
1000
0.02
0.01
VGS = 10 V
100
0
10
0 5 10 15 20 25 30 35 40
ID - Drain Current (A)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
1500
Axis Title
10000
1200
Ciss
900
1000
600
300
Coss
0
0
Crss
5
10 15 20 25
VDS - Drain-to-Source Voltage (V)
2nd line
Capacitance
100
10
30
Axis Title
8
ID = 5 A
6
VDS = 15 V
4
VDS = 7.5 V
VDS = 24 V
2
10000
1000
100
0
10
0
4
8
12
16
20
Qg - Total Gate Charge (nC)
2nd line
Gate Charge
1.6
ID = 5 A
1.4
1.2
Axis Title
VGS = 10 V
10000
VGS = 4.5 V 1000
1.0
100
0.8
0.6
-50
10
-25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S16-2441Rev. A, 05-Dec-16
3
Document Number: 75354
For technical questions, contact: pmostechsupport@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000