SIA446DJ Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 150 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.400
10
T_J = 150 °C
0.320
0.240
I_D = 3 A
SiA446DJ
Vishay Siliconix
T_J = 125 °C
0.160
1
T_J = 25 °C
T_J = 25 °C
0.080
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3.6
3.4
3.2
3.0
2.8
I_D = 250 μA
2.6
2.4
2.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
Limited by I_Don
Limited by I_DM
1
100 μs
0.1
0.01 T_A = 25 °C
1 ms
10 ms
100 ms
1s
10 s
DC
0.001
0.1
BVDSS Limited
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-0208-Rev. B, 10-Feb-14
4
Document Number: 62925
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000