SIA446DJ Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 150 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
2.0
V_GS = 10 V thru 6 V
8
1.6
SiA446DJ
Vishay Siliconix
6
V_GS = 5 V
1.2
4
2
0
0.0
V_GS = 4 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.8
0.4
0.0
0.0
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
1.0
2.0
3.0
4.0
5.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.250
0.200
0.150
0.100
V_GS = 6 V
V_GS = 7.5 V
V_GS = 10 V
0.050
0.000
0
2
4
6
8
10
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
350
300
250
C_iss
200
150
C_oss
100
50
C_rss
0
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
8
I_D = 3.5 A
V_DS = 75 V
V_DS = 37.5 V
6
V_DS = 120 V
4
2
1.8
1.6
I_D = 3 A
1.4
1.2
1.0
0.8
0.6
V_GS = 10 V, 7.5 V
V_GS = 6 V
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Gate Charge
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S14-0208-Rev. B, 10-Feb-14
3
Document Number: 62925
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