SIA425EDJ Datasheet, PDF (4/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

SiA425EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.15
10
T_J = 150 °C
T_J = 25 °C
1
0.12
0.09
I_D = 2 A; T_J = 125 °C
I_D = 4.2 A; T_J = 125 °C
0.06 ^{ID = 2 A; TJ = 25 °C}
I_D = 4.2 A; T_J = 25 °C
0.03
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.9
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
0.8
16
I_D = 250 µA
0.7
12
0.6
8
0.5
4
0.4
0.3
- 50 - 25 0
25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by R_DS(on)*
10
100 µs
1
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65575
S09-2268-Rev. A, 02-Nov-09