SIA425EDJ Datasheet, PDF (3/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

SiA425EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10^-1
T_J = 25 °C
10^-2
8
10^-3
6
10^-4
10^-5 _{TJ = 150 °C}
4
10^-6
T_J = 25 °C
10^-7
2
10^-8
0
0
3
6
9
12
15
18
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
10^-9
0
3
6
9
12
15
18
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
15
5
V_GS = 5 V thru 2.5 V
12
4
V_GS = 2 V
9
3
6
V_GS = 1.5 V
3
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.15
0.12
V_GS = 1.8 V
0.09
0.06
0.03
V_GS = 2.5 V
V_GS = 3.6 V
V_GS = 4.5 V
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 65575
S09-2268-Rev. A, 02-Nov-09
2
T_C = 25 °C
1
T_C = 125 °C
T_C = - 55 °C
0
0.0
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.5
1.4
V_GS = 4.5 V, 3.6 V, 2.5 V; I_D = 4.2 A
1.3
1.2
1.1
V_GS = 1.8 V; I_D = 2 A
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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