SI9945AEY Datasheet, PDF (4/4 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S), 175C MOSFET

Si9945AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
30
On-Resistance vs. Gate-to-Source Voltage
0.20
10
T_J = 175_C
T_J = 25_C
1
0
0.6
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.16
0.12
0.08
I_D = 3.7 A
0.04
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
120
0.3
90
I_D = 250 mA
0.0
60
–0.3
30
–0.6
–0.9
–50 –25 0 25 50 75 100 125 150 175
T_J – Temperature (_C)
0
0.001 0.01 0.1
1
10
100
1000
Time (sec)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 93_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
10⁺²
10⁺³
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 70758
S-57253—Rev. C, 24-Feb-98