SI9945AEY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S), 175C MOSFET

Si9945AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
25
25
V_GS = 10 through 5 V
20
4V
20
15
15
Transfer Characteristics
T_C = –55_C
25_C
150_C
10
10
3V
5
5
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
Capacitance
800
0.16
0.12
0.08
0.04
V_GS = 4.5 V
V_GS = 10 V
0
0
5
10
15
20
25
I_D – Drain Current (A)
Gate Charge
10
8
V_DS = 30 V
I_D = 3.7 A
6
4
2
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
600
C_iss
400
200
C_rss
C_oss
0
0
10
20
30
40
50
60
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.4
2.0
V_GS = 10 V
I_D = 3.7 A
1.6
1.2
0.8
0.4
0
–50 –25
0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
Document Number: 70758
S-57253—Rev. C, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
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