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SI9945AEY Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S), 175C MOSFET
Si9945AEY
Vishay Siliconix
Dual N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.080 @ VGS = 10 V
60
0.100 @ VGS = 4.5 V
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
ID (A)
"3.7
"3.4
D1 D1
G1
S1
N-Channel MOSFET
D2 D2
G2
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
60
"20
"3.7
"3.2
25
2
2.4
1.7
–55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Junction-to-Ambienta
t v 10 sec
Steady State
RthJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70758
S-57253—Rev. C, 24-Feb-98
Typ
Max
Unit
62.5
_C/W
93
www.vishay.com S FaxBack 408-970-5600
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