SI9942DY-T1 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Complimentary 20-V (D-S) MOSFET

Si9942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NĆCHANNEL
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.50
T_J = 150_C
0.40
T_J = 25_C
0.30
I_D = 3 A
0.20
0.10
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.4
0.00
0
30
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
0.2
25
I_D = 250 µA
–0.0
20
–0.2
15
–0.4
10
–0.6
5
–0.8
–50
0
50
100
150
T_J – Temperature (_C)
0
0.010
0.100
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10 30
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 62.5_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
4
Document Number: 70130
S-000652—Rev. L, 27-Mar-00