SI9942DY-T1 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Complimentary 20-V (D-S) MOSFET

Si9942DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V_GS(th)
I_GSS
I_DSS
On-State Drain Current^b
I_D(on)
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 16 V, V_GS = 0 V
V_DS = –16 V, V_GS = 0 V
V_DS = 16 V, V_GS = 0 V, T_J = 55_C
V_DS = –16 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_DS v –5 V, V_GS = –10 V
V_DS w 5 V, V_GS = 4.5 V
V_DS v –5 V, V_GS = –4.5 V
V_GS = 10 V, I_D = 1.0 A
V_GS = –10 V, I_D = 1.0 A
V_GS = 4.5 V, I_D = 0.5 A
V_GS = –4.5 V, I_D = 0.5 A
V_DS = 15 V, I_D = 3.0 A
V_DS = –15 V, I_D = –3.0 A
I_S = 1.25 A, V_GS = 0 V
I_S = –1.25 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
N-Channel
V_DS = 10 V, V_GS = 10 V, I_D = 2.3 A
Q_gs
P-Channel
V_DS = –10 V, V_GS = –10 V, I_D = –2.3 A
Q_gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t_d(on)
t_r
t_d(off)
t_f
N-Channel
V_DD = 20 V, R_L = 20 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
P-Channel
V_DD = –20 V, R_L = 20 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
I_F = 1.25 A, di/dt = 100 A/ms
Min Typ^a Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.0
V
–1.0
"100 nA
2
–2
mA
25
–25
10
–10
A
2
–2
0.07 0.125
0.12 0.200
W
0.105 0.250
0.22 0.350
4.8
S
3.0
0.75 1.2
V
–0.8 –1.2
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7
25
6.7
25
0.75
nC
1.3
1.7
1.6
6
15
10
40
10
20
12
40
17
50
ns
20
90
10
50
10
50
45
100
70
100
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2
Document Number: 70130
S-000652—Rev. L, 27-Mar-00