SI9942DY-T1 Datasheet, PDF (3/7 Pages) Vishay Siliconix – Complimentary 20-V (D-S) MOSFET

Si9942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
10
V_GS = 10 thru 4 V
8
8
6
6
NĆCHANNEL
Transfer Characteristics
T_C = –55_C
125_C
4
3V
2
0
0
0.20
2V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.16
0.12
0.08
V_GS = 4.5 V
V_GS = 10 V
0.04
0
0
2
4
6
8
10
I_D – Drain Current (A)
Gate Charge
10
8
V_DS = 10 V
I_D = 2.3 A
6
4
2
25_C
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Capacitance
600
500
400
300
200
100
0
0
C_iss
C_rss
C_oss
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
1.6
V_GS = 10 V
I_D = 2 A
1.2
4
0.8
2
0.4
0
0
2
4
6
8
Q_g – Total Gate Charge (nC)
Document Number: 70130
S-000652—Rev. L, 27-Mar-00
0
–50
0
50
100
150
T_J – Junction Temperature (_C)
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