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SI9934BDY Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET
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Si9934BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
30
Single Pulse Power
0.3
25
ID = 150 mA
0.2
20
0.1
15
0.0
10
−0.1
5
−0.2
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
10−3
10−2
10−1
1
10
Time (sec)
Safe Operating Area, Junction-to-Ambient
100
rDS(on) Limited
IDM Limited
100 600
10
1
ID(on)
Limited
0.1
TA = 25_C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BVDSS Limited
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
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4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
Document Number: 72525
S-41578—Rev. C, 23-Aug-04
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