SI9934BDY Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

Si9934BDY
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.035 @ V_GS = −4.5 V
−12
0.056 @ V_GS = −2.5 V
I_D (A)
−6.4
−5.1
FEATURES
D TrenchFETr Power MOSFET
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si9934BDY—E3
Si9934BDY-T1—E3 (with Tape and Reel)
S₁
G₁
D₁
P-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−12
"8
−6.4
−4.8
−5.1
−3.9
−20
−1.7
−0.9
2.0
1.1
1.3
0.7
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 72525
S-41578—Rev. C, 23-Aug-04
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
55
90
33
Maximum
62.5
110
40
Unit
_C/W
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