SI9934BDY Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

Si9934BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
2000
Capacitance
0.08
0.06
0.04
0.02
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D − Drain Current (A)
5
V_DS = 6 V
I_D = 6.4 A
4
Gate Charge
3
2
1
0
0
3
6
9
12
15
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
T_J = 25_C
1600
C_iss
1200
800
400
C_rss
C_oss
0
0
2
4
6
8
10
12
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
1.3
V_GS = 4.5 V
I_D = 6.4 A
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
I_D = 1.8 A
0.06
0.04
I_D = 6.4 A
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Document Number: 72525
S-41578—Rev. C, 23-Aug-04
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
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