SI8467DB Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

Si8467DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.20
0.16
T_J = 150 °C
10
0.12
T_J = 25 °C
0.08
1
0.04
I_D = 1.5 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
1.3
I_D = 250 μA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
25
20
15
10
5
0
0.001 0.01 0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 μs
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
100 ms, 1 s
10 s, DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65930
S10-0643-Rev. A, 22-Mar-10