SI8467DB Datasheet, PDF (3/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
5
V_GS = 5 V thru 3.5 V
V_GS = 3 V
12
4
Si8467DB
Vishay Siliconix
9
V_GS = 2.5 V
6
3
0
0.0
0.20
V_GS = 2 V
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
3
2
1
0
0.0
800
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.16
0.12
V_GS = 2.5 V
600
C_iss
400
0.08
V_GS = 4.5 V
0.04
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 1 A
8
V_DS = 5 V
6
V_DS = 10 V
4
V_DS = 16 V
2
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 65930
S10-0643-Rev. A, 22-Mar-10
200
C_rss
C_oss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.5
I_D = 1 A
1.4
1.3
V_GS = 4.5 V
1.2
V_GS = 2.5 V
1.1
1.0
0.9
0.8
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3