SI8461DB Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.20
0.16
10
T_J = 150 °C
0.12
T_J = 25 °C
0.08
1
0.04
Si8461DB
Vishay Siliconix
I_D = 1 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.9
25
0.8
I_D = 250 µA
20
0.7
15
0.6
10
0.5
0.4
5
0.3
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01 0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
10
1
100 µs
1 ms
T_A = 25 °C
Single Pulse
0.1
10 ms
100 ms, 1 s
10 s, DC
BVDSS Limited
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-1510-Rev. C, 29-Jun-15
4
Document Number: 65001
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