SI8461DB Datasheet, PDF (3/8 Pages) Vishay Siliconix – P-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
5
V_GS = 5 V thru 2.5 V
16
4
12
V_GS = 2 V
3
8
V_GS = 1.5 V
4
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.25
V_GS = 1.5 V
0.20
V_GS = 1.8 V
2
1
0
0.0
1500
1200
Si8461DB
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.15
0.10
0.05
V_GS = 2.5 V
V_GS = 4.5 V
0.00
0
5
10
15
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
I_D = 1 A
6
4
2
V_DS = 10 V
V_DS = 16 V
900
C_iss
600
300
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.3
I_D = 1 A
1.2
V_GS = 1.8 V, 1.5 V
1.1
V_GS = 4.5 V, 2.5 V
1.0
0.9
0
0
4
8
12
16
Q_g - Total Gate Charge (nC)
0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-1510-Rev. C, 29-Jun-15
3
Document Number: 65001
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